TIP132/TIP137 Silicon NPN/PNP Darlington Transistor Wafer
Specifications:
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
|
| Place of Origin | China |
|---|
Detailed Product Description
TIP132/TIP137 silicon NPN/PNP wafer Specifications: 1) Size: 2.8mm x 2.8mm 2) PC: 70W 3) IC: 8A 4) BVCEO: ≥100V 5) BVCBO: ≥100V 6) BVEBO: ≥6V 7) VCE (SAT): ≤2V
TIP132/TIP137 silicon NPN/PNP wafer Specifications: 1) Size: 2.8mm x 2.8mm 2) PC: 70W 3) IC: 8A 4) BVCEO: ≥100V 5) BVCBO: ≥100V 6) BVEBO: ≥6V 7) VCE (SAT): ≤2V
Contact Information
Find out more products in exporter